| Summary: | 碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 107 === This thesis develops the Radio-Frequency (RF) integrated circuits of the Internet of Things (IoT) by using TSMC CMOS 0.18μm process, including a low-power image-rejected resonate-LC-tank gain-enhanced low-noise amplifier (LNA), a high-gain low-power adjustable-image-rejected LNA, a low-power RF front-end circuit with tunable-image-rejection. The circuits of this paper is designed with low-voltage to achieve low-power consumption applications. Each circuit is analyzed with complete theory, using analog circuit software design to simulate the telecommunications characteristics of electromagnetic simulation software, and discusses the performance of each circuit parameter, so that the circuits shows the best performance.
The first part, a low-power image-rejected RF front-end circuit. RF port signal frequency is 2.4 GHz, LO port signal frequency is 1.6 GHz , IF port signal is frequency 800 MHz。RF front-end circuit has power gain 11.2 dB, noise figure 13.67 dB, IIP3 -30.73 dBm and power dissipation of 6.9 mW. Second part , a low-power image-rejected resonate-LC-tank gain-enhanced LNA operating frequency is 2.5~2.8 GHz. The resonate-LC-tank gain-enhanced LNA has power gain 16.5 dB , IIP3 of -16 dBm and power dissipation of 0.6mW. Third part, a low-power high-gain adjustable-image-rejected LNA operating frequency is 2.2~2.6 GHz. The adjustable-image-rejected LNA has power gain of 15.5 dB,IIP3 of -2 dBm and power dissipation 0.8 mW.
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