| Summary: | 碩士 === 國立中山大學 === 光電工程學系研究所 === 107 === The purpose of this study is to measure the electrical and optical properties of indium oxide, such as resistivity, carrier concentration, work function, refractive index and extinction coefficient, and apply indium oxide to solar cells and resistive random-access memory. In this study, the indium oxide is sputtered by RF magnetron sputtering system. During the process of sputtering, we can control the the ratio between argon to oxygen to obtain the indium oxide with different characteristics. After measurement, the indium oxide which is sputtered without oxygen has the resistivity, the carrier concentration, the workfunction of 0.00141 Ω∙cm, 2.46E+20, and 4.84 eV. The extinction coefficient demonstrate the light will be absorption in the long wavelength region. With the O2 partial pressure more high, the resistivity and work function will rise ,the carrier concentration will decrease, and the extinction coefficient will be 0 in the long wavelength region.
We apply a 6 nm indium oxide film to the perovskite solar cell as the buffer layer.
The efficiency of indium oxide buffer layer solar cells with the O2 partial pressure of 0%, 10%, and 15% are 0.083% and 0.125%. 0.144%.The O2 partial pressure of 80% indium oxide will be applied to resistive random-access memory. The insulator layer in resistive random-access memory is 10 nm indium oxide film. The memory window can still maintain one order difference at 85。C after we measure the RRAM in 10000s. The endurance is more than 100000 times.
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