| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 107 === The optical and electrical properties of GaSe1-xSx samples in the terahertz range were obtained using terahertz time-domain spectroscopy (THz-TDS). Results showed that the properties of the GaSe1-xSx samples approach that of GaS as the amount of sulfur increases. This behavior is linked to the stacking type transition of the GaSe1-xSx samples due to sulfur doping. The obtained index of refraction ranges from 3.0 to 3.3 for all samples. The absorption and conductivity of the GaSe1-xSx samples increases as the sulfur content increases. From the Drude model fitting, the obtained carrier concentration ranges from 0.7x1015 cm-3 to 2.3x1015 cm-3, decreasing as the amount of sulfur increases, while the obtained mobility ranges from 81 cm2/V⸱s to 233 cm2/V⸱s, increasing as the amount of sulfur increases.
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