| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 107 === The preparation of thin films by solution method is one of the main processes of Thin-Film Transistor (TFT) in recent years, which is more convenient and low-cost than the traditional vacuum process. Oxynitride channel is one of the semiconductor materials for the past few years because of its higher carrier mobility and better stability under negative gate bias stress (NBIS) than conventional metal oxide semiconductors. In this study, ZTO (ZnSnO) was used as the channel layer material of the thin film transistor, and ammonia gas (NH3) was introduced during the annealing of the film. It is expected that the nitrogen can be successfully incorporated into the ZTO channel layer to form oxynitrides. Based on the Auger electron spectrometer (AES) results, nitrogen was successfully incorporated into the ZTO films after ammonia annealing. The crystallinity of the films, with and without ammonia annealing, was observed using a Glancing incident angle X-ray diffraction instrument (GIA-XRD). The electrical properties of thin-film transistors, with and without ammonia annealing, were measured using the Agilent 4156C semiconductor analyzer. The experimental results present the positive shift of threshold voltage when device incorporating nitrogen,. At the same time, the on/off ratio still present an accepted value when the number of the channel layer increases. On the other hand, ZTO thin film transistors with ammonia annealing present having better performance than ZTO thin film transistors without ammonia annealing.
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