The studies for ZnO-Indium Gallium Zinc Oxide /Ultra-nanocrystalline Diamond hybrid Nanostructures for Sensing Properties

• Main Authors: Zhi-Jia Xu, 許智嘉
• Other Authors: Bohr-Ran Huang
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/3ux22v

碩士 === 國立臺灣科技大學 === 光電工程研究所 === 107 === Hydrogen (H2) gas have been recognized as future substitute natural resource for fuel requirements and commercial applications. However, it is unsafe hence it must detect with proper H2 gas detector with advance nano materials based device. As well, UV photodetectors are very important device that detect the harmful UV lights and also utilized in health diagnostics, flame discovery and satellite applications. Zinc oxide (ZnO) based gas sensor and UV photodetectors are excellent, and also ZnO possesses advance performance with addition of suitable materials. In this work, we devote to fabricate several gas sensors and photodetectors with combination of ZnO and nitrogen incorporated ultranano crystalline diamond (N-UNCD) and argon incorporated ultranano crystalline diamond (Ar-UNCD) with addition of indium gallium zinc oxide (IGZO) interlayer. In the first section, we focus the fabrication of H2 gas sensors using ZnO nanorods/tubes (ZNRs/ZNTs) with combination of Ar-UNCD and N-UNCD, which possesses gas response of 24% and 27%, respectively. On the otherhand, the IGZO interlayer with ZNRs/Ar-UNCD and ZNRs/N-UNCD exhibits H2 sensing response of 44% and 64%. Remarkably, the IGZO interlayer with ZNTs/Ar-UNCD and ZNTs/N-UNCD reveals enhanced H2 sensing response of 58% and 75%. Interestingly, IGZO interlayered ZNTs/Ar-UNCD exhibits excellent gas sensing of 82.5% under UV light illuminations. The systematic analysis reveals excellent gas response achieved due to effectual material defects and various heterojunction interfaces. In the second section, we focus the fabrication of UV photodetector using ZnO with combination of Ar-UNCD and N-UNCD with interlayered IGZO. Initially, we optimize the growth and of ZNR-ZNTs on N-UNCD substrates with interlayered IGZO, which exhibits the photoresponse switch ratio of 1098, 2985 and 3747, respectively. On the other hand, ZNR-Ar-UNCD-IGZO and ZNT-Ar-UNCD-IGZO nanostructures exhibits the superior photoresponse ratio of 9757 and 19017. The enhanced photoresponse achieved due to the effective electron-hole recombination through fast adsorptivity and oxygen vacancies under a UV atmosphere. The obtained gas and UV sensing performance of ZNT-Ar-UNCD-IGZO is overwhelmingly better than that of the ZnO based on previous studies and promising for future Gas/UV applications.