Multi-Level Bi-Directional Resonant DC Converter with Wide-Bandgap Component

• Main Authors: YUN-RUEY LEE, 李昀叡
• Other Authors: Huang-Jen Chiu
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/pf79ym

碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === This thesis aims to develop a Multi-Level Bi-Directional resonant DC converter with GaN Component. The circuit structure is symmetrical between the primary and secondary sides. By using Three-Level clamping structure, the voltage stress of the power switching element is half of the input voltage. So GaN power switch with lower voltage rating but lower switching loss can be selected. This thesis completes a high voltage Bi-Directional Series-Series half bridge Resonant DC-DC Converter with the specifications : output power of 3.3 kW, input voltage 800V, output voltage 800V. A 650V GaN component is used to verify the low voltage stress of this architecture. The final experimental results show that the full load efficiency can reach more than 96%.