28/38 GHz dual mode frequency synthesizer

碩士 === 國立臺灣科技大學 === 電機工程系 === 107 === A 28/38 GHz dual-band frequency synthesizer for 5th generation mobile communication is implemented using TSMC 90-nm CMOS technology. The on-chip VCO achieves the tuning range from 23.5 GHz to 28 GHz, and exhibits the phase noise of -105.57 dBc/Hz~ -107.08 dBc/Hz...

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Main Authors: Yen-Ting Chiang, 江衍霆
Other Authors: Hsiao-Chin Chen
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/xn7pyx
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spelling ndltd-TW-107NTUS54420152019-05-16T01:40:46Z http://ndltd.ncl.edu.tw/handle/xn7pyx 28/38 GHz dual mode frequency synthesizer 28/38 GHz 雙模頻率合成器 Yen-Ting Chiang 江衍霆 碩士 國立臺灣科技大學 電機工程系 107 A 28/38 GHz dual-band frequency synthesizer for 5th generation mobile communication is implemented using TSMC 90-nm CMOS technology. The on-chip VCO achieves the tuning range from 23.5 GHz to 28 GHz, and exhibits the phase noise of -105.57 dBc/Hz~ -107.08 dBc/Hz at 1 MHz offset, from the 23.5 GHz~28 GHz carriers. With dividers and mixers, the 28/38 GHz carrier is synthesized from the VCO output signal in two operation modes, where the synthesizer dissipates 143.16 mW at 28 GHz band with the resolution of 281.25 MHz and the in-band phase noise is -75.57 dBc/Hz ~-81.38 dBc/Hz @ 100 kHz offset, the out-band phase noise is -93.27 dBc/Hz ~-106.32 dBc/Hz @ 10 MHz offset, and 129.64 mW at 38 GHz band with the resolution of 375 MHz and the in-band phase noise is -77.11 dBc/Hz ~-84.75 dBc/Hz @ 100 kHz offset, the out-band phase noise is -98.34 dBc/Hz ~-105.29 dBc/Hz @ 10 MHz offset. The sideband rejection ratio is 17.8 dB ~ 39.73 dB. The LO leakage rejection ratio is 6.07 dB ~ 56.47 dB. The locking time is 4~6 μs. The chip area is 2.154 mm2. Hsiao-Chin Chen 陳筱青 2019 學位論文 ; thesis 84 en_US
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language en_US
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sources NDLTD
description 碩士 === 國立臺灣科技大學 === 電機工程系 === 107 === A 28/38 GHz dual-band frequency synthesizer for 5th generation mobile communication is implemented using TSMC 90-nm CMOS technology. The on-chip VCO achieves the tuning range from 23.5 GHz to 28 GHz, and exhibits the phase noise of -105.57 dBc/Hz~ -107.08 dBc/Hz at 1 MHz offset, from the 23.5 GHz~28 GHz carriers. With dividers and mixers, the 28/38 GHz carrier is synthesized from the VCO output signal in two operation modes, where the synthesizer dissipates 143.16 mW at 28 GHz band with the resolution of 281.25 MHz and the in-band phase noise is -75.57 dBc/Hz ~-81.38 dBc/Hz @ 100 kHz offset, the out-band phase noise is -93.27 dBc/Hz ~-106.32 dBc/Hz @ 10 MHz offset, and 129.64 mW at 38 GHz band with the resolution of 375 MHz and the in-band phase noise is -77.11 dBc/Hz ~-84.75 dBc/Hz @ 100 kHz offset, the out-band phase noise is -98.34 dBc/Hz ~-105.29 dBc/Hz @ 10 MHz offset. The sideband rejection ratio is 17.8 dB ~ 39.73 dB. The LO leakage rejection ratio is 6.07 dB ~ 56.47 dB. The locking time is 4~6 μs. The chip area is 2.154 mm2.
author2 Hsiao-Chin Chen
author_facet Hsiao-Chin Chen
Yen-Ting Chiang
江衍霆
author Yen-Ting Chiang
江衍霆
spellingShingle Yen-Ting Chiang
江衍霆
28/38 GHz dual mode frequency synthesizer
author_sort Yen-Ting Chiang
title 28/38 GHz dual mode frequency synthesizer
title_short 28/38 GHz dual mode frequency synthesizer
title_full 28/38 GHz dual mode frequency synthesizer
title_fullStr 28/38 GHz dual mode frequency synthesizer
title_full_unstemmed 28/38 GHz dual mode frequency synthesizer
title_sort 28/38 ghz dual mode frequency synthesizer
publishDate 2019
url http://ndltd.ncl.edu.tw/handle/xn7pyx
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