Electroplating Ru-W as a diffusion barrier

• Main Authors: Chen, Nai-Chia, 陳乃嘉
• Other Authors: Wen Jauh Chen
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/t6v8p3

碩士 === 國立雲林科技大學 === 材料科技研究所 === 107 === It was estimated to be > 130 GWp at the end of 2017 for the global photovoltaic module production capacity; The crystalline silicon solar cells share the above 90% market. Currently, screen printing is the dominant technology in the contact form of silicon-based photovoltaic industry. Due to the screen printing process is fast and straightforward. However, screen printing has a disadvantage in having a lower aspect ratio and higher contact resistance, high cost, limiting solar cell efficiency. The Ni/Cu plating techniques have low contact resistance which is an excellent solution to improve the efficiency of metallization processes. In the work, we formed a Cu/RuW/Si structure, the RuW and Cu film were desposited on textured silicon substrate by electroplating process replacing the expensive sputtering process. The Ni film was first deposited on textured Si substrate by electroless plating. The electroless Ni samples were annealed at 500℃ to form nickel silicide. Then the annealed sample etching was done in an HNO3 solution to remove unreacted nickel – this substrate designed as ta-Si. The thickness of electroplating copper layer is about 3㎛. The Cu/RuW/ta-Si samples were annealed isothermally in a furnace at 300 - 800℃ in Ar/H2 atmosphere for 10 min. The Cu/RuW/ta-Si samples were characterized by the four-point probe, a scanning electron microscope, and x-ray diffractometer. For the Cu/RuW (200nm)/ta-Si samples, when the annealing temperature increases near 600℃ the Cu3Si particles begin to form.