| Summary: | 碩士 === 元智大學 === 電機工程學系乙組 === 107 === This research presented an X-band GaN high microwave power amplifiers (PAs), including 10 GHz PA and 12 GHz PA by using WIN 0.25 um GaN process.
GaN technology provides more output power and high efficiency than silicon process, but this technology is expensive; designer must overcome the problem of heat dissipation under high power situation. In design, there are more considerations in high frequency and high power.
The circuit design is limited by the circuit model in source grounding configuration, so this research has adopted a two-stage CS amplifier method. The first stage plays the role as the gain enhancement function. The second stage provides higher output power capability. Input, inter-stage, and output matching circuits are implemented by transmission lines and capacitors, because the transmission line can withstand high DC currents and high RF signal powers. Besides, the size of the required transmission line can be reduced in high frequency operations. Therefore, it is desirable to complete a high frequency, high output power PA by this method.
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