Designs of monolithic GaN high power microwave amplifiers for X-band applications
碩士 === 元智大學 === 電機工程學系乙組 === 107 === This research presented an X-band GaN high microwave power amplifiers (PAs), including 10 GHz PA and 12 GHz PA by using WIN 0.25 um GaN process. GaN technology provides more output power and high efficiency than silicon process, but this technology is expensive;...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/wqr6xc |