Analysis and Optimization the Structure of High Power Semiconductor Laser by Numerical Simulation

• Main Authors: Lu, Yun-Ting, 盧勻圢
• Other Authors: Kuo, Hao-Chung
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/854xfv

碩士 === 國立交通大學 === 光電工程研究所 === 108 === In recent years, semiconductor laser had attracted much attention. Compare to LEDs, semiconductor laser have narrower bandwidth to provide pure color light. besides, they are suitable for sensing applications because of highly directivity and small divergence angle. DFB laser has an advantage of single mode, so it is widely used in long distance optical communication. However, increasing the power of DFB laser has become a important issue due to the rise of silicon photonic and the development of next generation mobile communication technology. Some characteristics in vertical-cavity surface-emitting lasers lead to be superior than edge-emitting laser including low threshold current, low power consumption, circular beam shape, and low divergence angle. Since Apple Inc. announced the face recognition system on iPhone, many companies started to develop 3D sensing, which uses infrared surface-emitting laser array as light source. In addition, there are advantages of no inteference in electromagnetic wave and well secretary in the visible light communication (VLC). Using GaN VCSEL to replace LEDs makes not only higher speed but also accurately control transmission. So it is helpful for improving the power of infrared and visible light VCSEL in the future development. In the thesis, we use simulation software to theoretically calculate each type of semiconductor laser. First, we optimize the quntum well pairs, the material mount of separate confinement heterostructure and cladding layer of DFB laser, and add multiple double heterojunction layer to discuss about the effct caused from each structure of DFB laser including output power. After that, in the VCSEL, we explore the influence of threshold current and maximum output power in different quntum well pairs, p-DBR pairs, and the thickness of oxidation layer. Then we use tunnel junction as the current spreading layer of GaN-based surface-emitting laser, which can reduce the absorbtion to improve output power.