Study of grain growth in CuVS thin film prepared by sputtering

• Main Authors: Syu, Wei-Jhe, 徐偉哲
• Other Authors: Lin, Yi-Cheng
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/2685kq

碩士 === 國立彰化師範大學 === 機電工程學系 === 108 === The proposal of study will be synthesizing a new thin film solar cell absorber characteried as a high Eg , high absorption, composed of rich-in-Earth elements material. CuVS thin film prepared through sputtering CuV, CuVS precursors sulfurized by H2S annealing process will be the interesting material in this thesis. Modulating sputtering parameters to control component of CuVS thin film is to get a single phase Cu3VS4 thin film. The grain growth model of Cu3VS4 thin film could be constructed through investigating Secondary phase appearing in CuVS film at different H2S annealing temperature. Results release that Cu3VS4 phase exist in each various composition ratio sample caused by Cu,V co-sputtering and 550℃ H2S-sulfurized process. Excess copper sulfides and Cu3VS4 phase appear in the surface and bottom of the Cu-rich CuVS film, respectively, the Cu-poor would be full of Cu3VS4 phase. In addition, there is a trend that the Cu/V ratio of CuVS film prepared by RF sputtering CuVS precursor and 550℃ H2S-sulfurized process increase with the decreasing RF sputtering power. Cu3VS4 and CuV2S4 tend to exist in the lower power and the high power, respectively. In the grain growth of high one (low Cu/V ratio), Cu3VS4 appears in the 350℃ H2S-sulfurized film and disappears rather than CuV2S4 exists in the 550℃ H2S-sulfurized film. On the other hand, in the grain growth of low one( high Cu/V ratio), the quality of Cu3VS4 phase would be improved with the H2S-sulfurized temperature up, and no excess Secondary phase exist in the 550℃ H2S-sulfurized Cu3VS4 film.