Experimental Comparison of Different Gate-Driver Configurations for Parallel-Connection of Normally-ON SiC JFETs
Due to the low current ratings of the currently available silicon carbide (SiC) switches they cannot be employed in high-power converters. Thus, it is necessary to parallel-connect several switches in order to reach higher current ratings. This paper presents an investigation of parallel-connected n...
| Main Authors: | , , , , |
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| Format: | Others |
| Language: | English |
| Published: |
KTH, Elektrisk energiomvandling
2012
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| Subjects: | |
| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104800 http://nbn-resolving.de/urn:isbn:978-1-4577-2085-7 |