Processing Technology for Si Based Tandem Solar Cells
This project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase E...
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ndltd-UPSALLA1-oai-DiVA.org-kth-1774422018-01-11T05:12:30ZProcessing Technology for Si Based Tandem Solar CellsengAydinci, NedimKTH, Skolan för informations- och kommunikationsteknik (ICT)2014Computer and Information SciencesData- och informationsvetenskapThis project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase Epitaxy) [1] or MBE (Molecular Beam Epitaxy) [2]. Tandem solar cell structures consist of subcells made of III-V semiconductors serially connected or grown on a suitable semiconductor substrate [3]. The used semiconductor materials have to be lattice matched to each other and with optimum band gap combinations [4]. Multi-junction solar cells with Si and III-V semiconductor sub-cells are promising to achieve extremely high efficiency. The objective of this project is to investigate a cost effective fabrication technology to realize III-V semiconductor and silicon based sub-cells in tandem solar cells. The Si p-n junction formation by PH3 diffusion for the silicon sub cell is studied in HVPE. A prototype InP solar cell was fabricated by HVPE and its I-V performance was studied. In this thesis, the impact of HVPE process parameters on the silicon p-n junction formation was examined by alternating the process temperature. Silicon samples were processed in the HVPE with temperature values of 1st (605 0C) < 2nd (657 0C) < 3rd (720 0C). It is observed that the temperature affects the quality of the formed Si p-n junction. The Si samples treated at 720 0C show a diode performance with a deviated I-V curve due to parasitic resistances. The InP solar cell fabrication consisted of the epitaxial growth of sulfur doped n-InP and zinc doped p-InP materials on top of each other to form n+/n+/n-/p+ [5] structure. Ohmic conduction through the InP solar cell structure was observed after the contacts formation, which could be due to the metal alloy spiking through the p-InP emitter layer during annealing. Process mitigations to fabricate InP solar cell by HVPE are proposed at the end of project. Student thesisinfo:eu-repo/semantics/bachelorThesistexthttp://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177442TRITA-ICT-EX ; 2014:172application/pdfinfo:eu-repo/semantics/openAccess |
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Computer and Information Sciences Data- och informationsvetenskap |
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Computer and Information Sciences Data- och informationsvetenskap Aydinci, Nedim Processing Technology for Si Based Tandem Solar Cells |
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This project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase Epitaxy) [1] or MBE (Molecular Beam Epitaxy) [2]. Tandem solar cell structures consist of subcells made of III-V semiconductors serially connected or grown on a suitable semiconductor substrate [3]. The used semiconductor materials have to be lattice matched to each other and with optimum band gap combinations [4]. Multi-junction solar cells with Si and III-V semiconductor sub-cells are promising to achieve extremely high efficiency. The objective of this project is to investigate a cost effective fabrication technology to realize III-V semiconductor and silicon based sub-cells in tandem solar cells. The Si p-n junction formation by PH3 diffusion for the silicon sub cell is studied in HVPE. A prototype InP solar cell was fabricated by HVPE and its I-V performance was studied. In this thesis, the impact of HVPE process parameters on the silicon p-n junction formation was examined by alternating the process temperature. Silicon samples were processed in the HVPE with temperature values of 1st (605 0C) < 2nd (657 0C) < 3rd (720 0C). It is observed that the temperature affects the quality of the formed Si p-n junction. The Si samples treated at 720 0C show a diode performance with a deviated I-V curve due to parasitic resistances. The InP solar cell fabrication consisted of the epitaxial growth of sulfur doped n-InP and zinc doped p-InP materials on top of each other to form n+/n+/n-/p+ [5] structure. Ohmic conduction through the InP solar cell structure was observed after the contacts formation, which could be due to the metal alloy spiking through the p-InP emitter layer during annealing. Process mitigations to fabricate InP solar cell by HVPE are proposed at the end of project. |
author |
Aydinci, Nedim |
author_facet |
Aydinci, Nedim |
author_sort |
Aydinci, Nedim |
title |
Processing Technology for Si Based Tandem Solar Cells |
title_short |
Processing Technology for Si Based Tandem Solar Cells |
title_full |
Processing Technology for Si Based Tandem Solar Cells |
title_fullStr |
Processing Technology for Si Based Tandem Solar Cells |
title_full_unstemmed |
Processing Technology for Si Based Tandem Solar Cells |
title_sort |
processing technology for si based tandem solar cells |
publisher |
KTH, Skolan för informations- och kommunikationsteknik (ICT) |
publishDate |
2014 |
url |
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177442 |
work_keys_str_mv |
AT aydincinedim processingtechnologyforsibasedtandemsolarcells |
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1718604819563806720 |