Capacitance transient measurements on point defects in silicon and silicol carbide
Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. T...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och Informationsteknik, IMIT
2005
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211 http://nbn-resolving.de/urn:isbn:91-7178-038-6 |