Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces
The superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-120893 http://nbn-resolving.de/urn:isbn:978-91-7685-998-8 (print) |