SiC Homoepitaxial Growth at High Rate by Chloride-based CVD
SiC is an attractive material since it has remarkable properties. For several years efforts have been put primarily in electronic applications. High power and high frequency devices can be fabricated on SiC due to its wide band gap, high breakdown field and high thermal conductivity. SiC devices can...
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| Format: | Others |
| Language: | English |
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Linköpings universitet
2010
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-57904 |