Framtagning av testutrustning för transistorer vid induktiv last.

• Main Author: Gunnarsson, Mathias
• Format: Others
• Language: Swedish
• Published: Linnéuniversitetet, Institutionen för fysik och elektroteknik (IFE) 2015
• Subjects: IGBT; MOSFET; Switchförluster
• Online Access: http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-50654

When a transistor is used as a switch in a conversion of electrical energy, the switching losses are decisive in the choice of the transistor. In order to compare these losses, a test equipment has been developed, which can be used to perform measurements on different IGBT-transistors when switching an inductive load. The objective of this work was to develop a test equipment, and to use it to take measurements of a number of transistors. The equipment has been designed in such a way that the components that affect the switching losses can be replaced in a simple manner. Parameters like switched voltage and pulse duration of the gate signal can be adjusted as well. In this way, different components influence can be examined and measurements can be adjusted to mimic different net-voltages. Developed test equipment has been used to perform measurements of four different IGBT-transistors when turned off, and a comparison between fall times, energy consumption and switching losses have been made. Measurements have only been done on IGBT-transistors as fluctuations occurred during the measurements of the MOSFET. This is believed to be due to that the fall time of the MOSFET is significantly less than for the IGBT, which leads to an increase of the impact of the parasitic components. For measurement of the MOSFET the components needs to be placed closer to each other, to thereby reduce parasitic components. Such equipment means that the components can not be replaced in a simple manner, which was the purpose of the test equipment. Measurements and comparison has been carried out on four different IGBT-transistor. They show an opportunity to reduce switching losses through the replacement of the current transistor.