Development of window layer for high efficiency high bandgap cadmium selenide solar cell for 4-terminal tandem solar cell applications

• Main Author: Vakkalanka, Sridevi A
• Format: Others
• Published: Scholar Commons 2006
• Subjects: Super lattice; Ternary; Zinc selenide; Zinc telluride; Copper selenide; American Studies; Arts and Humanities
• Online Access: http://scholarcommons.usf.edu/etd/2733; http://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=3732&context=etd

Tandem solar cells fabricated from thin films provide promise of improved efficiency while keeping the processing costs low. CdSe as top cells are investigated in this work. CIGS has been a standardized process with lab efficiencies reaching 18% [53]. This dissertation focuses on the development of conductive window layer for the development of a high performance, high bandgap solar cell. ZnSe, Cu2-xSe, and ZnSexTe1-x are investigated as viable window layers of the top cell. ZnSe in undoped form forms a good junction with CdSe films, but the Voc from these devices could never exceed the 360mV mark, while the current densities approached 17.5mA/cm2 [61].To improve Voc's, the high contact energy at the ZnSe/Cu interface has to be overcome by replacing Cu with a metal having higher work function or doping the window layer to form a tunneling contact with Copper.Deposition of ZnSe from binary sources in presence of nitrogen plasma resulted in films with proper stoichiometry. However, doping could not be accomplished. ZnTe is easily dopable, and was the next alternative. ZnTe doping in presence of Nitrogen plasma resulted in Zn rich films. Hence doping of the ternary compound ZnSexTe1-x was considered. This work focuses on studying the effects of compositional variation on the conductivity of the ZnSexTe1-x films. ZnSexTe1-x films were doped using Nitrogen. Films were deposited by co-evaporation from ZnTe, ZnSe and Se sources. Te/Se ratio was varied by varying the ZnTe thickness and Se Thickness. Films with Zn/Group VI ratio close to 1 were measured for conductivity using IV measurements. Highest conductivity of 2* 10-8 ohm-cm was obtained at ZnSe, ZnTe, and Se thicknesses of 2000Ã?, 1500Ã?, and 500Ã? respectively. The actual carrier concentration could be concealed by the current limiting Cu contacts. All films with Zn/Group VI ratio close to 1 showed slight conductivity in the 10-10 ohm-cm range. Layered ZnSexTe1-x Films doped with Nitrogen had targeted Zn/Group VI ratio of 1, but with a higher Te content. The films were also slightly conductive, in the 10-10 ohm-cm range. The mechanism limiting the doping in all the films seems to be the same.