Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C
Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below 400...
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| Format: | Others |
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/27491 http://scholar.lib.vt.edu/theses/available/etd-05022002-145350/ |