Piezoelectric effects in GaAs MESFET's
Gallium arsenide MESFETS require protective passivation at several steps in their fabrication. A common film used for device passivation is silicon nitride. This passivation film is deposited on gallium arsenide substrates by chemical vapor deposition techniques and possesses high intrinsic stress....
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| Format: | Others |
| Language: | en |
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/40029 http://scholar.lib.vt.edu/theses/available/etd-10202005-102819/ |