Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors
<p>A more complete model for InP/InGaAs Double Heterojunction Bipolar Transistors (DHBT) is obtained in this thesis by physically analyzing the transport process of the main current components. The potential distribution of the energy barrier constitutes a fundamental analytical concept and...
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| Format: | Others |
| Language: | en |
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/44645 http://scholar.lib.vt.edu/theses/available/etd-09082012-040146/ |