Optical studies of ion-bombarded gallium arsenide
The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means...
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| Format: | Others |
| Language: | en_US |
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Virginia Polytechnic Institute and State University
2015
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| Online Access: | http://hdl.handle.net/10919/54357 |