Semiconducting tin oxide thin films on glass
Stannic oxide films on glass, deposited by th ·spray technique, are found to be n-type semiconductors. The large carrier concentration (~10¹⁹/cm³) of these films causes the donor level to blend into an impurity band. Annealing the stannic oxide film results in a diffusion of glass components on the...
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| Format: | Others |
| Language: | en_US |
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Virginia Polytechnic Institute and State University
2016
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| Online Access: | http://hdl.handle.net/10919/64612 |