EMI Terminal Behavioral Modeling of SiC-based Power Converters
With GaN and SiC switching devices becoming more commercially available, higher switching frequency is being applied to achieve higher efficiency and power density in power converters. However, electro-magnetic interference (EMI) becomes a more severe problem as a result. In this thesis, the switchi...
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| Format: | Others |
| Language: | en_US |
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Virginia Tech
2017
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| Online Access: | http://hdl.handle.net/10919/78154 http://scholar.lib.vt.edu/theses/available/etd-08252015-003042/ |