Electronic structure and bond energy trends in silicon-hydrogen and germanium-hydrogen bond activation by transition metals.
The electronic structure factors that control Si-H and Ge-H bond activation by transition metals are investigated by means of photoelectron spectroscopy. Molecular orbital calculations are also used to gain additional insight into the orbital interactions involved in bond activation. The complexes s...
| Main Author: | |
|---|---|
| Other Authors: | |
| Language: | en |
| Published: |
The University of Arizona.
1989
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10150/184731 |