Growth, structure, and electronic properties of molybdenum/silicon thin films by Molecular beam epitaxy (MBE).
Mo-Si thin films have proven applications in semiconductor devices and x-ray optics. Since their performance in these applications is extremely sensitive to interface roughness, it is important to understand the nucleation and growth mechanisms which affect the microscopic interface structure. Inves...
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| Language: | en |
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The University of Arizona.
1989
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| Online Access: | http://hdl.handle.net/10150/184846 |