SOLID STATE WIDEBAND POWER AMPLIFIER DEVELOPMENT AT 20 AND 44 GHz

International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, California === Two amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be discussed. The on-going developments of a 20 GHz communication amplifier sponsored by NASA Lewis using...

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Bibliographic Details
Main Authors: Ngan, Y.C., Sun, C.
Other Authors: TRW
Language:en_US
Published: International Foundation for Telemetering 1981
Online Access:http://hdl.handle.net/10150/614939
http://arizona.openrepository.com/arizona/handle/10150/614939
Description
Summary:International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, California === Two amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be discussed. The on-going developments of a 20 GHz communication amplifier sponsored by NASA Lewis using injection locking and resonant cavity combiner will be reviewed. A wideband 20 GHz amplifier to achieve 20 Watt 1 GHz bandwidth based on 3-dB hybrid couplers and stable mode of amplification, along with the results obtained from the constant voltage mode of amplification will be discussed. A wideband solid state amplifier designed as a driver for a 44 GHz terminal transmitter will be described. The amplifier is designed for 2 GHz 1-dB bandwidth centered at 44.5 GHz, with an overall gain of 40 dB. A six-stage design is used to accomplish 500 mW output power. Low cost construction and mechanical ruggedness are emphasized in this design.