SOLID STATE WIDEBAND POWER AMPLIFIER DEVELOPMENT AT 20 AND 44 GHz
International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, California === Two amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be discussed. The on-going developments of a 20 GHz communication amplifier sponsored by NASA Lewis using...
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Language: | en_US |
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International Foundation for Telemetering
1981
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Online Access: | http://hdl.handle.net/10150/614939 http://arizona.openrepository.com/arizona/handle/10150/614939 |
Summary: | International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, California === Two amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be
discussed. The on-going developments of a 20 GHz communication amplifier sponsored
by NASA Lewis using injection locking and resonant cavity combiner will be reviewed. A
wideband 20 GHz amplifier to achieve 20 Watt 1 GHz bandwidth based on 3-dB hybrid
couplers and stable mode of amplification, along with the results obtained from the
constant voltage mode of amplification will be discussed.
A wideband solid state amplifier designed as a driver for a 44 GHz terminal transmitter
will be described. The amplifier is designed for 2 GHz 1-dB bandwidth centered at 44.5
GHz, with an overall gain of 40 dB. A six-stage design is used to accomplish 500 mW
output power. Low cost construction and mechanical ruggedness are emphasized in this
design. |
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