SOLID STATE WIDEBAND POWER AMPLIFIER DEVELOPMENT AT 20 AND 44 GHz

• Main Authors: Ngan, Y.C., Sun, C.
• Other Authors: TRW
• Language: en_US
• Published: International Foundation for Telemetering 1981
• Online Access: http://hdl.handle.net/10150/614939; http://arizona.openrepository.com/arizona/handle/10150/614939

International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, California === Two amplifier developments centered at 20 GHz based on GaAs IMPATT diodes will be discussed. The on-going developments of a 20 GHz communication amplifier sponsored by NASA Lewis using injection locking and resonant cavity combiner will be reviewed. A wideband 20 GHz amplifier to achieve 20 Watt 1 GHz bandwidth based on 3-dB hybrid couplers and stable mode of amplification, along with the results obtained from the constant voltage mode of amplification will be discussed. A wideband solid state amplifier designed as a driver for a 44 GHz terminal transmitter will be described. The amplifier is designed for 2 GHz 1-dB bandwidth centered at 44.5 GHz, with an overall gain of 40 dB. A six-stage design is used to accomplish 500 mW output power. Low cost construction and mechanical ruggedness are emphasized in this design.