Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence...

Full description

Bibliographic Details
Main Authors:	Almasi, H., Xu, M., Xu, Y., Newhouse-Illige, T., Wang, W. G.
Other Authors:	Univ Arizona, Dept Phys
Language:	en
Published:	AMER INST PHYSICS 2016
Online Access:	http://hdl.handle.net/10150/621317 http://arizona.openrepository.com/arizona/handle/10150/621317

id	ndltd-arizona.edu-oai-arizona.openrepository.com-10150-621317
record_format	oai_dc
spelling	ndltd-arizona.edu-oai-arizona.openrepository.com-10150-6213172016-11-12T03:00:31Z Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions Almasi, H. Xu, M. Xu, Y. Newhouse-Illige, T. Wang, W. G. Univ Arizona, Dept Phys Department of Physics, University of Arizona, Tucson, Arizona 85721, USA Department of Physics, University of Arizona, Tucson, Arizona 85721, USA Department of Physics, University of Arizona, Tucson, Arizona 85721, USA Department of Physics, University of Arizona, Tucson, Arizona 85721, USA Department of Physics, University of Arizona, Tucson, Arizona 85721, USA The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 degrees C. Published by AIP Publishing. 2016-07-18 Article Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions 2016, 109 (3):032401 Applied Physics Letters 0003-6951 1077-3118 10.1063/1.4958732 http://hdl.handle.net/10150/621317 http://arizona.openrepository.com/arizona/handle/10150/621317 Applied Physics Letters en http://scitation.aip.org/content/aip/journal/apl/109/3/10.1063/1.4958732 Published by AIP Publishing. AMER INST PHYSICS
collection	NDLTD
language	en
sources	NDLTD
description	The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 degrees C. Published by AIP Publishing.
author2	Univ Arizona, Dept Phys
author_facet	Univ Arizona, Dept Phys Almasi, H. Xu, M. Xu, Y. Newhouse-Illige, T. Wang, W. G.
author	Almasi, H. Xu, M. Xu, Y. Newhouse-Illige, T. Wang, W. G.
spellingShingle	Almasi, H. Xu, M. Xu, Y. Newhouse-Illige, T. Wang, W. G. Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
author_sort	Almasi, H.
title	Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
title_short	Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
title_full	Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
title_fullStr	Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
title_full_unstemmed	Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions
title_sort	effect of mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in ta/cofeb/mgo junctions
publisher	AMER INST PHYSICS
publishDate	2016
url	http://hdl.handle.net/10150/621317 http://arizona.openrepository.com/arizona/handle/10150/621317
work_keys_str_mv	AT almasih effectofmoinsertionlayersonthemagnetoresistanceandperpendicularmagneticanisotropyintacofebmgojunctions AT xum effectofmoinsertionlayersonthemagnetoresistanceandperpendicularmagneticanisotropyintacofebmgojunctions AT xuy effectofmoinsertionlayersonthemagnetoresistanceandperpendicularmagneticanisotropyintacofebmgojunctions AT newhouseilliget effectofmoinsertionlayersonthemagnetoresistanceandperpendicularmagneticanisotropyintacofebmgojunctions AT wangwg effectofmoinsertionlayersonthemagnetoresistanceandperpendicularmagneticanisotropyintacofebmgojunctions
_version_	1718392939820875776

Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

Similar Items