Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence...

Full description

Bibliographic Details
Main Authors: Almasi, H., Xu, M., Xu, Y., Newhouse-Illige, T., Wang, W. G.
Other Authors: Univ Arizona, Dept Phys
Language:en
Published: AMER INST PHYSICS 2016
Online Access:http://hdl.handle.net/10150/621317
http://arizona.openrepository.com/arizona/handle/10150/621317