Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials

abstract: The mechanism of loss in high performance microwave dielectrics with complex perovskite structure, including Ba(Zn1/3Ta2/3)O3, Ba(Cd1/3Ta2/3)O3, ZrTiO4-ZnNb2O6, Ba(Zn1/3Nb2/3)O3, and BaTi4O9-BaZn2Ti4O11, has been investigated. We studied materials synthesized in our own lab and from commer...

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Other Authors: Liu, Lingtao (Author)
Format: Doctoral Thesis
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/2286/R.I.16430
id ndltd-asu.edu-item-16430
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spelling ndltd-asu.edu-item-164302018-06-22T03:03:41Z Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials abstract: The mechanism of loss in high performance microwave dielectrics with complex perovskite structure, including Ba(Zn1/3Ta2/3)O3, Ba(Cd1/3Ta2/3)O3, ZrTiO4-ZnNb2O6, Ba(Zn1/3Nb2/3)O3, and BaTi4O9-BaZn2Ti4O11, has been investigated. We studied materials synthesized in our own lab and from commercial vendors. Then the measured loss tangent was correlated to the optical, structural, and electrical properties of the material. To accurately and quantitatively determine the microwave loss and Electron Paramagnetic Resonance (EPR) spectra as a function of temperature and magnetic field, we developed parallel plate resonator (PPR) and dielectric resonator (DR) techniques. Our studies found a marked increase in the loss at low temperatures is found in materials containing transition metal with unpaired d-electrons as a result of resonant spin excitations in isolated atoms (light doping) or exchange coupled clusters (moderate to high doping) ; a mechanism that differs from the usual suspects. The loss tangent can be drastically reduced by applying static magnetic fields. Our measurements also show that this mechanism significantly contributes to room temperature loss, but does not dominate. In order to study the electronic structure of these materials, we grew single crystal thin film dielectrics for spectroscopic studies, including angular resolved photoemission spectroscopy (ARPES) experiment. We have synthesized stoichiometric Ba(Cd1/3Ta2/3)O3 [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial when grown with an elevated substrate temperature of 635 C, an enhanced oxygen pressures of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. Analysis of ultra violet optical absorption results indicate that BCT has a bandgap of 4.9 eV. Dissertation/Thesis Liu, Lingtao (Author) Newman, Nathan (Advisor) Marzke, Robert (Committee member) Chamberlin, Ralph (Committee member) Arizona State University (Publisher) Materials Science Defects Dielectric resonator Loss tangent mechanisms Microwave dielectrics Perovskite Wireless communication eng 132 pages Ph.D. Materials Science and Engineering 2013 Doctoral Dissertation http://hdl.handle.net/2286/R.I.16430 http://rightsstatements.org/vocab/InC/1.0/ All Rights Reserved 2013
collection NDLTD
language English
format Doctoral Thesis
sources NDLTD
topic Materials Science
Defects
Dielectric resonator
Loss tangent mechanisms
Microwave dielectrics
Perovskite
Wireless communication
spellingShingle Materials Science
Defects
Dielectric resonator
Loss tangent mechanisms
Microwave dielectrics
Perovskite
Wireless communication
Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials
description abstract: The mechanism of loss in high performance microwave dielectrics with complex perovskite structure, including Ba(Zn1/3Ta2/3)O3, Ba(Cd1/3Ta2/3)O3, ZrTiO4-ZnNb2O6, Ba(Zn1/3Nb2/3)O3, and BaTi4O9-BaZn2Ti4O11, has been investigated. We studied materials synthesized in our own lab and from commercial vendors. Then the measured loss tangent was correlated to the optical, structural, and electrical properties of the material. To accurately and quantitatively determine the microwave loss and Electron Paramagnetic Resonance (EPR) spectra as a function of temperature and magnetic field, we developed parallel plate resonator (PPR) and dielectric resonator (DR) techniques. Our studies found a marked increase in the loss at low temperatures is found in materials containing transition metal with unpaired d-electrons as a result of resonant spin excitations in isolated atoms (light doping) or exchange coupled clusters (moderate to high doping) ; a mechanism that differs from the usual suspects. The loss tangent can be drastically reduced by applying static magnetic fields. Our measurements also show that this mechanism significantly contributes to room temperature loss, but does not dominate. In order to study the electronic structure of these materials, we grew single crystal thin film dielectrics for spectroscopic studies, including angular resolved photoemission spectroscopy (ARPES) experiment. We have synthesized stoichiometric Ba(Cd1/3Ta2/3)O3 [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial when grown with an elevated substrate temperature of 635 C, an enhanced oxygen pressures of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. Analysis of ultra violet optical absorption results indicate that BCT has a bandgap of 4.9 eV. === Dissertation/Thesis === Ph.D. Materials Science and Engineering 2013
author2 Liu, Lingtao (Author)
author_facet Liu, Lingtao (Author)
title Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials
title_short Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials
title_full Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials
title_fullStr Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials
title_full_unstemmed Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials
title_sort mechanisms of microwave loss tangent in high performance dielectric materials
publishDate 2013
url http://hdl.handle.net/2286/R.I.16430
_version_ 1718699960221827072