New Model for Simulating Impact of Negative Bias Temperature Instability (NBTI) in CMOS Circuits
abstract: Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis...
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| Format: | Dissertation |
| Language: | English |
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2014
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| Online Access: | http://hdl.handle.net/2286/R.I.27468 |