The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits
abstract: Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. A...
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| Format: | Dissertation |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/2286/R.I.8692 |