Large signal characterization of microwave GaAs MESFETs
Large Signal modelling of GaAs MESFETs has often been based on the device material and electrical parameters. This approach, while helping in elucidating the physics of the device, does not help the device user very much. There is the problem of modelling and computation complexity, and of simulatio...
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University of Surrey
1988
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.232883 |