Interstitial reactions in electron irradiated carbon-doped silicon

Bibliographic Details
Main Author: Chappell, S. P.
Published: University of Reading 1988
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233143
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record_format oai_dc
spelling ndltd-bl.uk-oai-ethos.bl.uk-2331432015-03-19T07:11:33ZInterstitial reactions in electron irradiated carbon-doped siliconChappell, S. P.1988530.41Electron irradiated siliconUniversity of Readinghttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233143Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 530.41
Electron irradiated silicon
spellingShingle 530.41
Electron irradiated silicon
Chappell, S. P.
Interstitial reactions in electron irradiated carbon-doped silicon
author Chappell, S. P.
author_facet Chappell, S. P.
author_sort Chappell, S. P.
title Interstitial reactions in electron irradiated carbon-doped silicon
title_short Interstitial reactions in electron irradiated carbon-doped silicon
title_full Interstitial reactions in electron irradiated carbon-doped silicon
title_fullStr Interstitial reactions in electron irradiated carbon-doped silicon
title_full_unstemmed Interstitial reactions in electron irradiated carbon-doped silicon
title_sort interstitial reactions in electron irradiated carbon-doped silicon
publisher University of Reading
publishDate 1988
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233143
work_keys_str_mv AT chappellsp interstitialreactionsinelectronirradiatedcarbondopedsilicon
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