Dielectric breakdown and its application in high density, electrically programmable memories

Bibliographic Details
Main Author:	Billingham, Phillip
Published:	University of Cambridge 1992
Subjects:	530.41 VLSI circuits
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.281929

id	ndltd-bl.uk-oai-ethos.bl.uk-281929
record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-2819292015-03-19T09:24:04ZDielectric breakdown and its application in high density, electrically programmable memoriesBillingham, Phillip1992530.41VLSI circuitsUniversity of Cambridgehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.281929Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	530.41 VLSI circuits
spellingShingle	530.41 VLSI circuits Billingham, Phillip Dielectric breakdown and its application in high density, electrically programmable memories
author	Billingham, Phillip
author_facet	Billingham, Phillip
author_sort	Billingham, Phillip
title	Dielectric breakdown and its application in high density, electrically programmable memories
title_short	Dielectric breakdown and its application in high density, electrically programmable memories
title_full	Dielectric breakdown and its application in high density, electrically programmable memories
title_fullStr	Dielectric breakdown and its application in high density, electrically programmable memories
title_full_unstemmed	Dielectric breakdown and its application in high density, electrically programmable memories
title_sort	dielectric breakdown and its application in high density, electrically programmable memories
publisher	University of Cambridge
publishDate	1992
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.281929
work_keys_str_mv	AT billinghamphillip dielectricbreakdownanditsapplicationinhighdensityelectricallyprogrammablememories
_version_	1716769684515192832

Dielectric breakdown and its application in high density, electrically programmable memories

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