Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
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Queen's University Belfast
1995
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ndltd-bl.uk-oai-ethos.bl.uk-2953892015-03-19T05:44:54ZWafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layersGoh, Wang Ling1995621.31042ComponentsQueen's University Belfasthttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295389Electronic Thesis or Dissertation |
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topic |
621.31042 Components |
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621.31042 Components Goh, Wang Ling Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
author |
Goh, Wang Ling |
author_facet |
Goh, Wang Ling |
author_sort |
Goh, Wang Ling |
title |
Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
title_short |
Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
title_full |
Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
title_fullStr |
Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
title_full_unstemmed |
Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
title_sort |
wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers |
publisher |
Queen's University Belfast |
publishDate |
1995 |
url |
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295389 |
work_keys_str_mv |
AT gohwangling waferbondingtechnologyfortheproductionofdielectricallyisolatedsiliconsubstratesincorporatingburiedmetalsilicidelayers |
_version_ |
1716742490384498688 |