Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers

Bibliographic Details
Main Author: Goh, Wang Ling
Published: Queen's University Belfast 1995
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295389
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spelling ndltd-bl.uk-oai-ethos.bl.uk-2953892015-03-19T05:44:54ZWafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layersGoh, Wang Ling1995621.31042ComponentsQueen's University Belfasthttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295389Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 621.31042
Components
spellingShingle 621.31042
Components
Goh, Wang Ling
Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
author Goh, Wang Ling
author_facet Goh, Wang Ling
author_sort Goh, Wang Ling
title Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
title_short Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
title_full Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
title_fullStr Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
title_full_unstemmed Wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
title_sort wafer bonding technology for the production of dielectrically isolated silicon substrates incorporating buried metal silicide layers
publisher Queen's University Belfast
publishDate 1995
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295389
work_keys_str_mv AT gohwangling waferbondingtechnologyfortheproductionofdielectricallyisolatedsiliconsubstratesincorporatingburiedmetalsilicidelayers
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