Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials

Bibliographic Details
Main Author:	Laczik, Z.
Published:	University of Oxford 1992
Subjects:	530.41 Semiconductor technology
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316864

id	ndltd-bl.uk-oai-ethos.bl.uk-316864
record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-3168642015-03-19T10:35:38ZScanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materialsLaczik, Z.1992530.41Semiconductor technologyUniversity of Oxfordhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316864Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	530.41 Semiconductor technology
spellingShingle	530.41 Semiconductor technology Laczik, Z. Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials
author	Laczik, Z.
author_facet	Laczik, Z.
author_sort	Laczik, Z.
title	Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials
title_short	Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials
title_full	Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials
title_fullStr	Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials
title_full_unstemmed	Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materials
title_sort	scanning infra-red microscope studies of inhomogeneities in si and gaas ingot materials
publisher	University of Oxford
publishDate	1992
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316864
work_keys_str_mv	AT laczikz scanninginfraredmicroscopestudiesofinhomogeneitiesinsiandgaasingotmaterials
_version_	1716775621399412736

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