Channelling and T.E.M. studies of radiation disorder in ion implanted nickel
Main Author: | Al-Tamimi, Z. |
---|---|
Published: |
University of Salford
1983
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.344962 |
Similar Items
-
The influence of ion implantation on the oxidation of nickel and stainless steel
by: Slater, M.
Published: (1982) -
A T.E.M. study of the defect structure of ion implanted silicon
by: Lambert, J. A.
Published: (1978) -
Dose and dose rate effects in ion implanted silicon
by: Al-Hashmi, S. A. R.
Published: (1984) -
TEM investigation of silicon devices
by: Lindsay, Richard
Published: (1998) -
Low energy ion implantation
by: Sharples, Graham Robert
Published: (1988)