The implantation of donor ions into gallium arsenide for field effect transistors
The purpose of the work described in this dissertation was to investigate the use of donor ion implantation into GaAs for the production of doped layers suitable for the manufacture of Schottky gated field effect transistors or MESFETs. The project had four main aims: (i) The establishment of a reli...
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University of Surrey
1983
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.346869 |