Defects in irradiated MOS structures
The MOS device is the basic switching element in modern integrated circuits, and its reliability is vital to the successful operation of electronic equipment. Exposure to ionising radiation seriously affects MOS devices because of charge trapping and the formation of defects at the silicon-silicon d...
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University of Cambridge
1985
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.354693 |