Fabrication and evaluation of In0.52Al0.48As/In0.53Ga0.47As/InP quantum cascade laser
InP-based quantum cascade (QC) lasers were fabricated following the design reported by Faist et al. with the initial aim of applying them in gas sensing applications. The lasers were characterised by our collaborators, Cockburn et al. Unfortunately, the performance of our QC lasers (QCLs) did not li...
Main Author: | Farmer, Corrie David |
---|---|
Published: |
University of Glasgow
2000
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368576 |
Similar Items
-
The electrical and optical properties of In0.52Al0.48As/In0.53Ga0.47As heterostructures
by: Hang,Da-Ren, et al.
Published: (1996) -
Crescimento de In0.52Al0.48As e In0.53Ga0.47As sobre InP por MBE
by: Galo Emilio Sisniegas Charcape
Published: (1997) -
Crescimento de In0.52Al0.48As e In0.53Ga0.47As sobre InP por MBE
by: Charcape, Galo Emilio Sisniegas
Published: (1997) -
An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT
by: Hwang, C.J, et al.
Published: (2010) -
Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
by: Hyeon-Bhin Jo, et al.
Published: (2018-07-01)