Atomic and electronic structure of grain boundaries in silicon
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University of Oxford
1987
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ndltd-bl.uk-oai-ethos.bl.uk-3799302015-03-19T10:32:50ZAtomic and electronic structure of grain boundaries in siliconPaxton, A. T.1987539.7Silicon electronic matrixUniversity of Oxfordhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930Electronic Thesis or Dissertation |
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NDLTD |
sources |
NDLTD |
topic |
539.7 Silicon electronic matrix |
spellingShingle |
539.7 Silicon electronic matrix Paxton, A. T. Atomic and electronic structure of grain boundaries in silicon |
author |
Paxton, A. T. |
author_facet |
Paxton, A. T. |
author_sort |
Paxton, A. T. |
title |
Atomic and electronic structure of grain boundaries in silicon |
title_short |
Atomic and electronic structure of grain boundaries in silicon |
title_full |
Atomic and electronic structure of grain boundaries in silicon |
title_fullStr |
Atomic and electronic structure of grain boundaries in silicon |
title_full_unstemmed |
Atomic and electronic structure of grain boundaries in silicon |
title_sort |
atomic and electronic structure of grain boundaries in silicon |
publisher |
University of Oxford |
publishDate |
1987 |
url |
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930 |
work_keys_str_mv |
AT paxtonat atomicandelectronicstructureofgrainboundariesinsilicon |
_version_ |
1716774863383822336 |