Atomic and electronic structure of grain boundaries in silicon

Bibliographic Details
Main Author: Paxton, A. T.
Published: University of Oxford 1987
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930
id ndltd-bl.uk-oai-ethos.bl.uk-379930
record_format oai_dc
spelling ndltd-bl.uk-oai-ethos.bl.uk-3799302015-03-19T10:32:50ZAtomic and electronic structure of grain boundaries in siliconPaxton, A. T.1987539.7Silicon electronic matrixUniversity of Oxfordhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 539.7
Silicon electronic matrix
spellingShingle 539.7
Silicon electronic matrix
Paxton, A. T.
Atomic and electronic structure of grain boundaries in silicon
author Paxton, A. T.
author_facet Paxton, A. T.
author_sort Paxton, A. T.
title Atomic and electronic structure of grain boundaries in silicon
title_short Atomic and electronic structure of grain boundaries in silicon
title_full Atomic and electronic structure of grain boundaries in silicon
title_fullStr Atomic and electronic structure of grain boundaries in silicon
title_full_unstemmed Atomic and electronic structure of grain boundaries in silicon
title_sort atomic and electronic structure of grain boundaries in silicon
publisher University of Oxford
publishDate 1987
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930
work_keys_str_mv AT paxtonat atomicandelectronicstructureofgrainboundariesinsilicon
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