Factors affecting the properties of thermally grown oxides on gallium arsenide
This thesis concerns the growth mechanisms and the physical and electrical properties of dielectric films grown on gallium arsenide in dry oxygen between 350° C and 760° C for times up to 3 hours. Rutherford backscattering of 1.5 MeV helium ions was used to measure the thickness and...
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University of Surrey
1978
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.450371 |