Device and circuit simulation of nanoscale double gate SOI transistors
This thesis addresses the design and application of a state-of-the-art nano-scaled Undoped-Thinned Body (UTE) Double Gate Silicon-On-Insulator (DGSOI) for digital and RF applications using TCAD. A novel structure ofooSOI, which focuses on the source/drain extension regions, has been proposed. The re...
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Queen's University Belfast
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.484976 |