Design fabrication of lateral silicon germanium heterojunction bipolar transistors
This work provides a detailed study of device structures and fabrication routes required for the realisation of lateral SiGe heterojunction bipolar transistors (HBTs). After a comprehensive study of BJT and HBT device technologies our own designs of lateral SiGe HBT are introduced. The first design...
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University of Southampton
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.494686 |