| Summary: | This thesis considers some of the requirements and challenges in the eld of organic thin lm transistors (OTFTs), from the standpoint of large scale integration using low temperature plastic compatible processes. A combination of processes and materials for use in the fabrication of OTFTs is developed, yielding device performance comparable with the state of the art for bottom-contact, bottom-gate, organic small molecule thin lm transistors. High quality silicon nitride (SiNx) gate dielectric material is developed using plasma enhanced chemical vapour deposition (PECVD) at a low temperature (150 C) compatible with plastic substrates. A variety of high quality lms are developed, allowing an investigation into the impact of changes in SiNx composition on OTFT performance. Surface modi cation strategies on SiNx substrates are considered, leading to almost an order of magnitude enhancement in OTFT performance, suggesting a suitable device architecture for large scale integration, and exploitation of novel organic material properties. We then examine organic semiconductor nanowire devices, which have begun to emerge as a new and exciting class of device in recent years. This work explores the possibilities of combining traditional thin lm transistor fabrication techniques with novel organic nanowires and examines the resultant transistor device behaviour. Two-dimensional arrays of nanowire devices are analysed, demonstrating the suitability of devices for large area applications. The combination of a large area and plastic compatible, low temperature dielectric with well known organic semiconductors in thin lm devices suggests that the integration of novel organic nanowires could provide an exciting performance enhancement over traditional OTFT devices.
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