Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

This thesis optimizes the vacuum, vapour-phase self-assembly of n-octyl phosphonic acid monolayer. This monolayer is chemisorbed to the aluminium oxide (AIOx) and together they form an ultra-thin gate dielectric in organic thin-film transistors based on pentacene. The electrical measurements of the...

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Bibliographic Details
Main Author:	Gupta, Swati
Published:	University of Strathclyde 2014
Subjects:	621.3
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605940

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spelling	ndltd-bl.uk-oai-ethos.bl.uk-6059402016-08-04T03:52:03ZVacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistorsGupta, Swati2014This thesis optimizes the vacuum, vapour-phase self-assembly of n-octyl phosphonic acid monolayer. This monolayer is chemisorbed to the aluminium oxide (AIOx) and together they form an ultra-thin gate dielectric in organic thin-film transistors based on pentacene. The electrical measurements of the transistors and the corresponding metal-insulator-metal structures were combined with the characterization of n-octylphosphonic acid monolayers using the atomic force microscopy, water contact angle measurement and Fourier transform infrared spectroscopy. The results show that the properties of the organic monolayer depend on its evaporation rate, growth temperature and the post-growth annealing and affect the performance of the as-fabricated transistors as well as the transistor bias-induced instability.621.3University of Strathclydehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605940http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=23098Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	621.3
spellingShingle	621.3 Gupta, Swati Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
description	This thesis optimizes the vacuum, vapour-phase self-assembly of n-octyl phosphonic acid monolayer. This monolayer is chemisorbed to the aluminium oxide (AIOx) and together they form an ultra-thin gate dielectric in organic thin-film transistors based on pentacene. The electrical measurements of the transistors and the corresponding metal-insulator-metal structures were combined with the characterization of n-octylphosphonic acid monolayers using the atomic force microscopy, water contact angle measurement and Fourier transform infrared spectroscopy. The results show that the properties of the organic monolayer depend on its evaporation rate, growth temperature and the post-growth annealing and affect the performance of the as-fabricated transistors as well as the transistor bias-induced instability.
author	Gupta, Swati
author_facet	Gupta, Swati
author_sort	Gupta, Swati
title	Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
title_short	Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
title_full	Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
title_fullStr	Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
title_full_unstemmed	Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
title_sort	vacuum growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
publisher	University of Strathclyde
publishDate	2014
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605940
work_keys_str_mv	AT guptaswati vacuumgrowthofnoctylphosphonicacidmonolayerforlowvoltageorganicthinfilmtransistors
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Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

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