Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction

Bibliographic Details
Main Author: Downie, John Hall
Published: University of Edinburgh 1975
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.679320
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spelling ndltd-bl.uk-oai-ethos.bl.uk-6793202016-06-21T03:21:45ZImprovement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reactionDownie, John Hall1975University of Edinburghhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.679320http://hdl.handle.net/1842/13710Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
author Downie, John Hall
spellingShingle Downie, John Hall
Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
author_facet Downie, John Hall
author_sort Downie, John Hall
title Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
title_short Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
title_full Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
title_fullStr Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
title_full_unstemmed Improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
title_sort improvement in ultimate purity control of epitaxial gallium arsenide grown by vapour phase reaction
publisher University of Edinburgh
publishDate 1975
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.679320
work_keys_str_mv AT downiejohnhall improvementinultimatepuritycontrolofepitaxialgalliumarsenidegrownbyvapourphasereaction
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